Method for manufacturing a connection device for a semiconductor

Details Method for manufacturing a connection device for a semiconductor Method for manufacturing a connection device for a semiconductor

1991-11-18

1994-07-26

Echols, P. W.

Metal working

Method of mechanical manufacture

Electrical device making

156656, 156657, 1566591, 156662, H01K 310, H01L 21312

Patent

active

053317335

ABSTRACT:
A method for electrically connecting an internal wired layer through an insulating layer formed on the internal wired layer is described and comprises depositing a first conducting layer 1 on a substrate 10. An internal wired layer 1A is formed by etching a portion of the first conducting layer 1 utilizing a mask A. A first insulating layer 2 is deposited on the entire surface of the resulting structure. A second conducting layer 3 is deposited on the first insulating layer 2. An etch stop layer 3A is formed on the first insulating layer 2 and terminates on the first insulating layer and over the wired layer to define a surface of the wired layer covered by the etch stop layer and a surface of the wired layer not covered by the etch stop layer. A second insulating layer 4 is deposited on the entire surface of the resulting structure including on the etch stop layer 3A. A contact hole 20 is formed through the second insulating layer 4 and the first insulating layer 2 to expose the surface of the underlying wired layer not covered by the etch stop layer such that the etch stop covered surface of the wired layer remains covered by the overlying first insulating layer. A third conducting layer 5 for a predetermined purpose is deposited on the resulting structure including the contact hole for electrically connecting the wired layer 1A thereto.

REFERENCES:
patent: 5008216 (1991-04-01), Huang et al.
patent: 5010039 (1991-04-01), Ku et al.
patent: 5169802 (1992-12-01), Yeh

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