Semiconductor memory device for decreasing occupancy area by pro

Details Semiconductor memory device for decreasing occupancy area by pro Semiconductor memory device for decreasing occupancy area by pro

1990-06-13

1991-12-10

Fears, Terrell W.

Static information storage and retrieval

Powering

365 63, 365 51, G11C 1300

Patent

active

050724258

ABSTRACT:
A semiconductor memory device comprises first sense amplifier driving lines and second sense amplifier driving lines, the first sense amplifier driving lines are formed in a first wiring layer along the word line direction, and the second sense amplifier driving lines are formed in a second wiring layer along the bit line direction. Therefore, a current flowing in the each of the first sense amplifier driving lines becomes small, and the width of the first sense amplifier driving lines becomes small, so that occupancy area of the semiconductor memory device can be decreased and a large scale integration can be realized.

REFERENCES:
patent: 5022005 (1991-06-01), Tomnishi

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