Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1991-02-06
1993-06-15
Hudspeth, David R.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
395 24, 365 45, H03K 1700
Patent
active
052202020
ABSTRACT:
A memory device includes a nonlinear electric conductivity element, a charge accumulation element, and a switching element. The nonlinear electric conductivity element has an insulating layer having opposite surfaces, and first and second conductive layers respectively formed on the opposite surfaces of the insulating layer. The nonlinear electric conductivity element receives an external write signal applied to one of the first and second conductive layers, and outputs a signal having nonlinear electric conductivity characteristics from the other of the first and second conductive layers. The charge accumulation element has charge accumulation characteristics and is connected to receive and store the signal output from the other of the first and second conductive layers. The switching element is ON/OFF-controlled upon reception of the signal charge stored in the charge accumulation element. The switching element receives an external read voltage to read out the signal charge stored in the charge accumulation element as storage data. A memory apparatus includes a plurality of memory devices each having the nonlinear electric conductivity element the charge accumulation element and the switching element. The plurality of memory devices are connected in a matrix form such that the switching elements in at least two memory devices can commonly receive the read voltage and can commonly read out the storage data.
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Applied Optics, vol. 24, No. 10; May 15, 1985; pp. 1469-1475; "Optical Implementation of the Hopfield Model"; Farhat et al.
Isono Yasuo
Nakano Hiroshi
Hudspeth David R.
Olympus Optical Co,. Ltd.
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