CCD shift register

Details CCD shift register CCD shift register

1992-08-10

1993-06-15

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257220, 257232, 257250, H01L 2978, H01L 2714, H01L 3100

Patent

active

052201856

ABSTRACT:
A CCD shift register has a final transfer electrode which is formed only by a first polysilicon layer, and an output gate electrode which is formed by a second polysilicon layer. Under the output gate electrode, there is formed a doped region which is formed by a doping step of self alignment, independently of a doped region under the transfer electrodes. Therefore, it is possible to choose the impurity concentration and to adjust the potential level under the output gate electrode freely.

REFERENCES:
patent: 4939560 (1990-07-01), Narabu et al.
Patent Abstracts of Japan, vol. 9, No. 280 (E-356), Nov. 8, 1985 & JP-A-60 123 063 (Toshiba), Jul. 1, 1985.

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