Insulated gate field effect transistor provided with a protectiv

Details Insulated gate field effect transistor provided with a protectiv Insulated gate field effect transistor provided with a protectiv

1981-08-24

1984-11-06

Clawson, Jr., Joseph E.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 41, 357 51, 361 56, 361 91, 361111, H01L 2978

Patent

active

044815212

ABSTRACT:
An improved protective device for the gate insulation of an integrated-gate field effect transistor (IGFET) is disclosed that does not breakdown under spike-like input voltages. The protective device is formed on the same semiconductor chip as an operative IGFET and includes a resistor connected between the input terminal and the operative IGFET's gate, a protective IGFET whose drain and gate are both connected to the operative IGFET's gate, and another resistor connected between the protective IGFET's source and a constant voltage source.

REFERENCES:
patent: 3819952 (1974-06-01), Enomoto et al.

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