Semiconductor device with gradually varying doping levels to com

Details Semiconductor device with gradually varying doping levels to com Semiconductor device with gradually varying doping levels to com

1990-07-09

1991-12-10

James, Andrew J.

357 234, 357 237, 357 90, H01L 2702, H01L 2910, H01L 2701, H01L 2713

Patent

active

050722778

ABSTRACT:
A semiconductor device is provided which comprises a single crystalline substrate having a main surface, an insulating layer formed on the main surface of the single crystalline substrate, and a semiconductor region of a single crystal formed on the insulating layer, wherein the semiconductor region has top and bottom surfaces and a thickness of not more than 6 .mu.m and an impurity is doped in the semiconductor region from the top to bottom surfaces thereof, a concentration of the impurity gradually decreasing from the top to bottom surfaces, whereby the semiconductor region is made a first conductivity type by the doped impurity. The semiconductor device further comprises an insulating gate type field effect transistor including source and drain regions in the semiconductor region, the source and drain regions having a conductive type opposite to that of the first conductivity type, and further there is provided a process for manufacturing such a semiconductor device.

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