Semiconductor integrated circuit having interconnection with imp

Details Semiconductor integrated circuit having interconnection with imp Semiconductor integrated circuit having interconnection with imp

1990-12-10

1991-12-10

Mintel, William

357 43, 357 40, 357 59, 357 49, H01L 2702

Patent

active

050722743

ABSTRACT:
A semiconductor integrated circuit is supplied with a power source voltage to a circuit element forming layer thereof from a conductive layer through a substrate and a certain region made of a semiconductor type identical to that of the substrate. The conductive layer is formed on a back surface of the substrate, and the certain region makes contact with a front surface of the substrate. The circuit element forming layer is provided on the front surface side of the substrate and connects to the certain region. Alternatively, a region may be provided to extend from the circuit element forming layer to the substrate so as to provide a conductive path for supplying the power source voltage from the back surface of the substrate.

REFERENCES:
patent: 4151541 (1979-04-01), Roger
patent: 4266238 (1981-05-01), Nishizawa
patent: 4277794 (1981-07-01), Nuzillat
patent: 4511220 (1986-09-01), MacIver
patent: 4661202 (1987-04-01), Ochii
patent: 4819052 (1989-04-01), Hutter
patent: 4879584 (1989-11-01), Takagi et al.
patent: 4884117 (1989-11-01), Neppl et al.

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