Polycrystalline silicon ohmic contacts to group III-arsenide com

Details Polycrystalline silicon ohmic contacts to group III-arsenide com Polycrystalline silicon ohmic contacts to group III-arsenide com

1990-11-06

1991-06-25

James, Andrew J.

Fishing, trapping, and vermin destroying

357 59, 357 88, 357 71, 437186, H01L 2349, H01L 2940, H01L 2912, H01L 2144

Patent

active

050271873

ABSTRACT:
A polycrystalline silicon layer forms an Ohmic contact to a group III-arsenide compound semiconductor substrate by heating the substrate. The polysilicon contact out-diffuses silicon into the substrate to form an N++ region.

REFERENCES:
patent: 4519127 (1985-05-01), Arai
patent: 4908691 (1990-03-01), Silvestri et al.
"Diffusion of Silicon In Gallium Arsenide Using Rapid Thermal Processing: Experiment and Model", by Greinen et al.; American Institute of Physics--1984.
"The Diffusion of Silicon in Gallium Arsenide", by Antell; Solid-State Electronics, vol. 8, pp. 943-946, 1965.
"Semiconductors and Semimetals", by Willardson et al.; Academic Press, 1968.
"Study of Encapsulants for Annealing Si-Implanted GaAs", by Onuma et al.; 1982.
"Electron Microscope Studies of an Alloyed Au/Ni/Au--Ge Ohmic Contact to GaAs", by Kian et al.; American Institute of Physics--1983.

Affiliated with

Also associated with

Rating

Polycrystalline silicon ohmic contacts to group III-arsenide com does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polycrystalline silicon ohmic contacts to group III-arsenide com, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polycrystalline silicon ohmic contacts to group III-arsenide com will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1044253