Semiconductor device

Details Semiconductor device Semiconductor device

1990-02-01

1991-06-25

Hille, Rolf

357 233, 357 235, 357 41, 357 51, H01L 2904

Patent

active

050271865

ABSTRACT:
A static random access memory comprises a first power source, a second power source, a first resistor connected at one end to the first power source, a second resistor connected at one end to the first power source, a first FET including a first source connected to the second power source, a first drain connected to the other end of the first resistor, and a first gate arranged in parallel and electrically connected to the second resistor, via an insulating film, thereby varying a resistance value of the second resistor, and a second FET including a second source connected to the second power source, a second drain connected to the other end of the second resistor, and a second gate arranged in parallel and electrically connected to the first resistor, via an insulating film, thereby varying a resistance value of the first resistor.

REFERENCES:
patent: 4370798 (1983-02-01), Lien et al.
patent: 4717941 (1988-01-01), Yamazaki
patent: 4755480 (1988-07-01), Yau et al.
patent: 4797717 (1989-01-01), Ishibashi et al.
patent: 4835589 (1989-05-01), Pfiester
patent: 4907057 (1990-03-01), Ariizumi et al.

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