MOS gated bipolar transistor

Details MOS gated bipolar transistor MOS gated bipolar transistor

1991-03-12

1991-12-10

James, Andrew J.

357 238, 357 38, 357 46, 357 86, H01L 2910, H01L 2978

Patent

active

050722689

ABSTRACT:
A high voltage transistor includes a substrate of a first conductivity type. Within the substrate is a well region of a second conductivity type. A source region is within the substrate and adjoins the substrate surface. The source region includes a pocket of semiconductor material of the first conductivity type and a pocket of semiconductor material of the second conductivity type. A drain region is placed within the well region and adjoins the substrate surface. The drain region includes a pocket of semiconductor material of the first conductivity type and a pocket of semiconductor material of the second conductivity type. A source contact is electrically connected to the source region. A drain contact is electrically connected to the drain region. A top region of the first conductivity type is within the well region separate from the drain region and extends laterally from the drain region toward the source region. An insulating layer is deposited on the substrate covering a channel region between the top region and the source region and covering at least a portion of the source region and the top region. A gate electrode is placed on the insulating region electrically isolated from the substrate.

REFERENCES:
patent: 4712124 (1987-12-01), Stupp
patent: 4811075 (1989-03-01), Eklund
patent: 4926074 (1990-05-01), Singer et al.
patent: 4939566 (1990-07-01), Singer et al.
patent: 4952991 (1990-08-01), Kayama
patent: 4963951 (1990-10-01), Adler et al.
patent: 4965647 (1990-10-01), Takahashi
patent: 4967246 (1990-10-01), Tanaka
patent: 4972240 (1990-11-01), Murakani et al.
Article entitled, "Comparison of High Voltage Devices for Power Integrated Circuits", by R. Jayaraman et al., IEDM, 1984.

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