Complementary field effect transistor

Details Complementary field effect transistor Complementary field effect transistor

1990-06-26

1991-12-10

Hille, Rolf

357 238, 357 2314, 357 42, 357 41, 357 44, H01L 2910, H01L 2978, H01L 2968, H01L 2702

Patent

active

050722670

ABSTRACT:
Complementary field effect transistors are provided wherein double-diffusion MOS FETs including an N-channel and a P-channel are formed on one and the same semiconductor substrate. These two channels are respectively formed in well base regions having the same conductivity type, the well base regions being spaced from each other. A double diffusion P-channel MOS FET has drain regions of the conductivity type which is opposite to the conductivity of a well base region, adjoining a base region of the same conductivity type as the well base region. The P-channel is formed to have a thickness which is less than the thickness of the base region, to thereby realize a diffusion P-channel MOS FET having a short channel.

REFERENCES:
patent: 4680604 (1987-07-01), Nakagawa et al.
patent: 4694313 (1987-09-01), Beasom
patent: 4698655 (1987-10-01), Schultz
patent: 4823173 (1989-04-01), Beasom
patent: 4884113 (1989-11-01), Muramoto
patent: 4928155 (1990-05-01), Nakagawa et al.
patent: 4929991 (1990-05-01), Blanchard

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