Resonant-tunneling heterojunction bipolar transistor device

Details Resonant-tunneling heterojunction bipolar transistor device Resonant-tunneling heterojunction bipolar transistor device

1990-10-22

1991-06-25

James, Andrew J.

357 4, 357 16, H01L 2972, H01L 2712, H01L 29161

Patent

active

050271792

ABSTRACT:
A resonant-tunneling heterojunction bipolar transistor (RHBT) device having a superlattice structure and a PN junction. The RHBT includes an emitter layer, a base layer, a collector layer facing the base layer to form a PN junction at the interface between the base layer and the collector layer, and a superlattice structure including at least one quantum well defining a sub-band of energy at which carriers resonant-tunnel therethrough. The superlattice is formed at least in the emitter layer and faces. The RHBT has a differential negative resistance characteristic for realizing a variety of logic circuits and includes an electron resonance and a positive hole resonance, for which the generation condition is changeable in response to a mole fraction of material of the emitter layer.

REFERENCES:
patent: 4712121 (1987-12-01), Yokoyama
patent: 4785340 (1988-11-01), Nakagawa et al.
Asbeck et al., "Ga,Al/As/GaAs Bipolar Transistors for Digital Integrated Circuits", International Electron Devices Meeting, pp. 629 to 632, Dec. 1981.
Japanese Journal of Applied Physics, vol. 24, No. 11, Nov. 1985, pp. L853-L854, Tokyo, JP; N. Yokoyama et al.: "A New Functional Resonant-Tunneling Hot Electron Transistor (RHET)".
Journal of Applied Physics, vol. 54, No. 11, Nov. 1983, pp. 6725-6731, American Institute of Physics, New York, U.S.; S. L. Su et al.: "Double Heterojunction GaAs/AlxGal-xAs Bipolar Transistors Prepared by Molecular Beam Epitaxy".
Journal of Applied Physics, vol. 58, No. 3, Aug. 1, 1985, pp. 1366-1368, American Institute of Physics, New York, U.S.; F. Capasso et al.: "Resonant Tunneling Transistor with Quantum Well Base and High-Energy Injection: A New Negative Differential Resistance Device".
Patent Abstracts of Japan, vol. 7, No. 222 (E-201) [1367], Oct. 4, 1983; and JP-A-58 114 455 (Nippon Denki K.K.) 7-7-83.
Applied Physics Letters, vol. 47, No. 4, Aug. 1985, pp. 415-417, American Institute of Physics, New York, U.S.; E. E. Mendez et al.: "Resonant Tunneling of Holes in AlAs-GaAs-AlAs Heterostructures".

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