P-channel insulation gate type bipolar transistor

Details P-channel insulation gate type bipolar transistor P-channel insulation gate type bipolar transistor

1991-01-24

1991-12-10

James, Andrew J.

357 238, 357 37, 357 38, 357 13, 357 86, H01L 2910, H01L 2978

Patent

active

050722654

ABSTRACT:
A p-channel insulation gate type bipolar transistor, wherein the thickness and specific resistivity of the p.sup.+ layer and p.sup.- layer, respectively, are constrained so as to avoid avalanche breakdown when a load L is turned off.

REFERENCES:
patent: 4364073 (1982-12-01), Becke et al.
patent: 4502070 (1985-02-01), Leipold et al.
patent: 4684413 (1987-08-01), Goodman et al.
High-Power Conductivity-Modulated FET's (COMFET's) with a p-Type Channel; IEEE Electron Device Letters, vol. EDL-5, No. 11, Nov. 1984; J. P. Russell et al., pp. 437-439.

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