Diamond transistor and method of manufacture thereof

Details Diamond transistor and method of manufacture thereof Diamond transistor and method of manufacture thereof

1989-05-24

1991-12-10

James, Andrew J.

357 16, 357 231, 357 59, H01L 2980

Patent

active

050722646

ABSTRACT:
The invention provides a process for manufacturing a field-effect transistor on a p-type diamond substrate. The process includes depositing a layer of p' doped amorphous silicon or germanium on the surface of the substrate and depositing a layer of a first metal over the p.sup.+ layer. Portions of the layer of the first metal and the p+ layer are selectively removed to define source and drain regions of the transistor. A gate region is defined by an exposed portion of the substrate between the source and drain regions. A layer of a wide-bandgap insulating material is deposited over the source, gate and drain regions and then selectively removed to allow metallic contacts to be applied to the source, gate and drain regions.

REFERENCES:
patent: 4072545 (1978-02-01), De La Moneda
patent: 4893155 (1990-01-01), Ohata
Fischer, "Reducing FET Channel Cross Section," IBM Technical Disclosure Bulletin, Jun. 1971; vol. 14 No. 1, p. 191.

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