Floating base lateral bipolar phototransistor with field effect

Details Floating base lateral bipolar phototransistor with field effect Floating base lateral bipolar phototransistor with field effect

1989-07-24

1991-06-25

Hille, Rolf

357 237, 357 34, 357 4, H01L 2714, H01L 3100

Patent

active

050271776

ABSTRACT:
A lateral bipolar phototransistor having a floating, photosensitive base region is formed in a silicon layer on an insulator substrate. Insulated gate electrodes are formed above and below the base reigon and are voltage biased to create a field effect causing majority carriers to accumulate in the base region. The majority carriers accumulate in layers which face the respective gate electrodes and extend between an emitter and collector of the bipolar transistor. A bias voltage applied to the gate electrodes has a polarity opposite to a polarity of the majority carriers in the emitter and collector regions and is sufficiently high to bias field effect transistors constituted by the gate electrodes in combination with the emitter, base and collector of the bipolar phototransistor into cutoff. The accumulation creates a depleted base region with reduced parasitic capacitance and resistance, thereby enabling higher frequency operation and current gain.

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Colinge, "An SOI . . . MOS device", IEEE, vol. ED-34, No. 4, Apr. 1987.

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