Semiconductor device with substrate misorientation

Details Semiconductor device with substrate misorientation Semiconductor device with substrate misorientation

1990-06-01

1991-06-25

Mintel, William

357 4, 357 16, 357 60, H01L 3300

Patent

active

050271695

ABSTRACT:
A semiconductor device comprising a (111)B single-crystalline semiconductor substrate which is misoriented toward (110), and epitaxial layers grown on the substrate by molecular beam epitaxy, whereby the crystallinity and luminescence efficiency of epitaxial layers are significantly improved.

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