Semiconductor device

Details Semiconductor device Semiconductor device

1989-03-23

1991-06-25

Edlow, Martin H.

357 16, 357 17, 357 30, H01L 2712

Patent

active

050271644

ABSTRACT:
A semiconductor device generally has an anode layer, a first semiconductor layer, a first cladding layer having a superlattice structure, an active layer having a superlattice structure, a second cladding layer having a superlattice structure, a cathode barrier layer, a second semiconductor layer, and a cathode layer. The cathode barrier layer allows electrons to tunnel therethrough when a voltage is applied across the anode and cathode layers so that a potential on a side of the superlattices is positive with respect to the cathode barrier layer. The active layer has the superlattice with a bottom energy of a miniband from which electrons transit to a lower miniband with a light emission which bottom energy is smaller than those of the superlattices of the first and second cladding layers.

REFERENCES:
patent: 4438446 (1981-05-01), Tsang
patent: 4731789 (1988-03-01), Thornton
patent: 4794611 (1988-12-01), Hara

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