Method for forming contact portion of semiconductor device

Details Method for forming contact portion of semiconductor device Method for forming contact portion of semiconductor device

1992-03-23

1993-06-15

Maples, John S.

Fishing, trapping, and vermin destroying

437247, 437228, H01L 21441

Patent

active

052197891

ABSTRACT:
A method for forming a contact portion which comprises holing a contact hole in a dielectric layer formed on a silicon substrate, protecting at least exposed portion of the silicon substrate at the bottom of the contact hole with TiW film and then depositing tungsten in the contact hole by CVD method.

REFERENCES:
patent: 4465716 (1984-08-01), Baber et al.
patent: 4845050 (1989-07-01), Kim et al.
patent: 4924295 (1990-05-01), Kuecher
patent: 4961822 (1990-10-01), Liao et al.
Wolf, Stanley, "Silicon Processing for the VLSI ERA", Lattrie Press, 1990, Sunset Beach, CA. pp. 242-248.

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