Method of making semiconductor well structure

Details Method of making semiconductor well structure Method of making semiconductor well structure

1992-03-20

1993-06-15

Thomas, Tom

Fishing, trapping, and vermin destroying

437 34, 437 56, 437235, 437238, H01L 2170

Patent

active

052197832

ABSTRACT:
A method of forming doped well regions in a semiconductor layer 14 is disclosed herein. At least one n-doped region 30 and at least one p-doped region 36 are formed in the semiconductor layer 14. The n-doped region 30 is separated from the p-doped region 36 by a separation region 39. An oxide layer 32 (38), for example silicon dioxide, is formed over the n-doped region 30 and p-doped region (36) but not over the separation region 39. The semiconductor layer 14 is then heated (e.g., at a temperature of less than 1150.degree. C.) in a nitridizing environment such as ammonia. Other structures and methods are also disclosed.

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M. M. Moslehi et al., "Thermal Nitridation of Si and SiO.sub.2 for VLSI", IEEE Transactions on Electron Devices, vol. ED-32, No. 2, Feb. 1985, pp. 106-123.
M. M. Moslehi et al., "Rapid thermal nitridation of SiO.sub.2 for nitroxide thin dielectrics", Appl. Phys. Lett. 47, vol. 47, No. 10, 15 Nov. 1985, pp. 1113-1115.

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