Fishing – trapping – and vermin destroying
Patent
1992-03-30
1993-06-15
Thomas, Tom
Fishing, trapping, and vermin destroying
437 48, 437228, 437233, 437922, H01L 2170
Patent
active
052197824
ABSTRACT:
In one described embodiment of the present invention, a method for manufacturing a sublithographic semiconductor feature is disclosed. This method comprises: depositing a feature material on a substrate (14); depositing and patterning a resist material (20) over said feature material; vertically, anisotropically etching said feature material to form a feature pattern (18) with substantially vertical sidewalls underlying said resist material pattern (20); isotropically etching said feature pattern (18) such that said feature pattern (18) sidewalls are undercut from beneath said resist material pattern (20) to form a reduced geometry feature (18) whereby said reduced geometry feature (18) has a geometry less than that of the overlying resist material pattern (20). Another described embodiment comprises an antifuse formed by the above method wherein the antifuse dielectric (24) is a nitride-oxide (N-O) layer. The further advantage gained using this structure is that the programming voltage required is substantially reduced due to the asymmetric current conduction characteristics of the N-O dielectric. This lower programming voltage enhances the scalability of this structure to smaller processes as the need for high voltage transistors is reduced. Other devices, systems and methods are also disclosed.
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Chen Kueing-Long
Liu David K.-Y.
Donaldson Richard L.
Kesterson James C.
McCormack Brian C.
Texas Instruments Incorporated
Thomas Tom
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