Method of depositing a semiconductor layer from a glow discharge

Details Method of depositing a semiconductor layer from a glow discharge Method of depositing a semiconductor layer from a glow discharge

1983-10-27

1984-11-06

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 84, 427 86, 427 88, 427 95, 427264, B05D 302

Patent

active

044812302

ABSTRACT:
An improved method for the deposition of a semiconductor layer from the positive column of a glow discharge is disclosed. The improvement comprises dividing an electrically conducting layer on a surface of an insulator into a plurality of electrically isolated segments. The width of each segment is preferably less than or equal to the maximum allowable difference in the relative plasma potential over the conducting substrate divided by the plasma potential gradient. Data for amorphous silicon photovoltaic devices are also disclosed which show a greatly improved uniformity in V.sub.oc and J.sub.sc with relative position in the positive column for segmented as compared to unsegmented devices.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4315096 (1982-02-01), Tyan
G. Francis, "the Glow Discharge at Low Pressures," Encyclopedia of Physics, vol. 22, pp. 53-203 (1956), (Springer Verlag, Berlin).
Matsumura et al., "Large-area Deposition of Amorphous-Silicon," Journal de Physique 10, C4-671 (1981).
Uchida et al., "Arc Discharge Produced Amorphous Silicon Solar-Cells," 3d Photovoltaic Sci. and Engr. Conf. in Japan, 1982, p. 85.

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