Method of producing a thin film transistor device

Details Method of producing a thin film transistor device Method of producing a thin film transistor device

1991-09-18

1993-06-15

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 48, 257356, 359 59, 359 87, H01L 21336, H01L 2976, G02L 113, G02L 1133

Patent

active

052197719

ABSTRACT:
A method of producing on a substrate at least one transistor having electrodes with low interelectrode capacitance, the method characterized by the steps of forming at least one transistor on a substrate, forming a guard conductor on the substrate, forming electrical connectors on the substrate to electrically connect the electrodes and guard conductor while the electrodes have substantially equal electrical potential, and severing the electrical connections to separate the guard conductor from the electrodes.

REFERENCES:
patent: 4803536 (1989-02-01), Tuan
patent: 4876584 (1989-10-01), Taylor
patent: 5068748 (1991-11-01), Ukai et al.

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