Method for producing Schottky diodes

Metal treatment – Compositions – Heat treating

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29571, 29576B, 29578, 29591, 148187, 357 91, H01L 21265

Patent

active

044810415

ABSTRACT:
Method for manufacturing Schottky diodes which have a doped self-aligning guard ring in the fringe region of the Schottky contact in the semiconductor layer underneath, in which the guard ring is inserted into the semiconductor layer by means of implantation. Parts of a first intermediate layer applied to the semiconductor surface to be implanted as well as parts of a second intermediate layer serve as the implantation mask.

REFERENCES:
patent: 4063964 (1977-12-01), Peressini et al.
patent: 4084987 (1978-04-01), Gobber
patent: 4096622 (1978-06-01), McIver
patent: 4119446 (1978-10-01), Mastroianni
patent: 4310362 (1982-01-01), Roche et al.
patent: 4371423 (1983-02-01), Yoshizawa et al.
patent: 4377030 (1983-03-01), Pettenpaul et al.

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