Method for forming metal layer

Details Method for forming metal layer Method for forming metal layer

1991-02-08

1991-12-10

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

20419215, 20419216, 20419217, H01L 21443, C23C 1434

Patent

active

050717910

ABSTRACT:
A method for forming a metal layer includes the steps of forming an insulation layer having at least one step portion on a wafer; and forming the metal layer over the insulation layer. The metal layer is formed by depositing aluminum-based alloy by sputtering while the wafer is heated to a temperature higher than a predetermined temperature. As a result, at the step portion, a good step coverage can be obtained and the surface of the metal layer can be planarized. At the same time, the method according to the present invention contributes to a prevention of deterioration in the quality of the layer and facilitates a process to be carried out at a later stage.

REFERENCES:
patent: 3620837 (1971-11-01), Leff et al.
patent: 4721689 (1988-01-01), Chaloux, Jr. et al.
Solid State Technology, vol. 22, No. 12, Dec. 1979, "Aluminum and Aluminum Alloy Sputter Deposition of VLSI", Hartsough et al., pp. 66-72.

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