Method for forming a metal electrical connector to a surface of

Fishing – trapping – and vermin destroying

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437246, 437201, H01L 21283

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active

050717898

ABSTRACT:
Contact with a substrate or conductor underlying an opening in the insulating layer is made by depositing a thin film of high melting point metal using a selective vapor phase growth process so that the metal film grows across the exposed surface and then creeps-up the sidewalls of the insulating layer. Electrical contact is completed by covering the thin film with a thicker growth of high melting point metal, preferably using a second selective vapor phase growth process, and then depositing a conducting film over the insulating layer in electrical contact with the thicker growth of metal.

REFERENCES:
patent: 4271424 (1981-06-01), Inayoshi et al.
patent: 4616401 (1986-10-01), Takeuchi
patent: 4670967 (1987-06-01), Hazuki
Moriya, et al., IEEE IEDM Technical Digest, 1983, pp. 550-553.
Vossen, J. Vac. Sci. Technol., 19(3), Sep./Oct. 1981, pp. 761-765.
Moriya, et al., "A New Encroachment Free . . . ", Ext. Abs. 15th Conf. on Solid State Dev. and Mat., Tokyo, 1983, pp. 225-228.
Panleau, Y., "Chemical Vapour . . . ", Thin Solid Films, 122 (1984), pp. 243-258.
Itoh, et al., "Creep-up Phenomena . . . ", IEEE IEDM Technical Digest, Dec. 1985, pp. 606-609.

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