Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1989-03-07
1991-02-05
Nelms, David C.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505701, 505702, 505703, 250211J, H01J 4014, H01B 1200, H01L 3912
Patent
active
049904876
ABSTRACT:
The disclosed superconductive optoelectronic device has a substrate, a photoconductive gate region formed on the substrate, and a source region and a drain region formed on the substrate at opposite sides of the gate region so as to face toward each other across the gate region. The source region and the drain region are made of a superconductive material. The gate region is made of such superconductive photoconductive-material, which reveals photoconductivity at a temperature below the transition temperature of the above superconductive material and has a similar general chemical formula to that of the above superconductive material except that concentrations of constituent elements are different. Also disclosed are superconductive optoelectronic devices formed of an organized integration of the above superconductive optoelectronic devices to develop a new field of "Superconductive Opto-Electronics".
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Messinger Michael
Nelms David C.
The University of Tokyo
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