Extrinsic infrared detector with dopant site charge-neutralizati

Details Extrinsic infrared detector with dopant site charge-neutralizati Extrinsic infrared detector with dopant site charge-neutralizati

1981-12-22

1984-02-21

Edlow, Martin H.

357 24, 357 86, H01L 2714, H01L 2978

Patent

active

044333439

ABSTRACT:
A relatively thin layer of extrinsic material formed on the top surface of a nearly intrinsic semiconductor substrate forms the detector area of an infrared detector device. A source region is provided along a portion of the perimeter of the detector area and is electrically coupled to the extrinsic detector area by means of an external connection. A drain channel is provided which is separated from the detector area by a gate region. The concentration of the extrinsic material in the detector area is sufficient for it to be at least a poor conductor. Thus, replacement electrons can flow from the source region into the extrinsic detector area via the external connection and electrical charge-neutrality can thereby be maintained at the extrinsic sites. The gate electrode forms a fringing field extending into the detector area which facilitates conduction from the detector area to the drain channel during the read-out process. An X-Y addressable array of such detectors can be readily fabricated using silicon MOS technology.

REFERENCES:
patent: 3634143 (1972-01-01), Brennan
patent: 3856989 (1973-08-01), Weimer
patent: 4008485 (1977-02-01), Miyoshi et al.
patent: 4223330 (1980-09-01), Kolke et al.
patent: 4313127 (1982-01-01), Su et al.
"Charge Coupled Devices & Systems", Howes, M. J., Morgan, D. V., Eds., John Wiley and Sons, (1979), pp. 284-292.

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