Planar type heterostructure avalanche photodiode

Details Planar type heterostructure avalanche photodiode Planar type heterostructure avalanche photodiode

1988-08-19

1990-11-27

Hille, Rolf

357 16, 357 52, 357 90, H01L 2714

Patent

active

049740610

ABSTRACT:
A planar type heterostructure avalanche photodiode comprises first and second semiconductor layers having first and second forbidden energy gaps. The second forbidden energy gap is larger than the first forbidden energy gap. In the second semiconductor layer, the second forbidden energy gap is increased as a distance is increased from a hetero-interface between the first and second semiconductor layers, and a pn junction is provided. A cross sectional shape of the outer periphery of the pn junction is defined by a curvature dependent on the increase of the second forbidden energy gap.

REFERENCES:
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patent: 4383266 (1983-05-01), Sakai et al.
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patent: 4651187 (1987-03-01), Sugimoto et al.
patent: 4684969 (1987-08-01), Taguchi
patent: 4701773 (1987-10-01), Kaneda et al.
Chi et al., "Planar InP/InGaAsP . . . Photodiode", IEEE, vol. Ed.-34, No. 11, 11/1987.

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