Process for low temperature stoichiometric recrystallization of

Details Process for low temperature stoichiometric recrystallization of Process for low temperature stoichiometric recrystallization of

1977-03-31

1978-06-13

Kendall, Ralph S.

Coating processes

Electrical product produced

Photoelectric

148 63, 156610, 156613, 156614, 156DIG70, 427 76, 427 87, 427124, 427248A, 427248E, 427255, 427377, 427378, 427380, 427374R, H01L 21363, H01L 21203

Patent

active

040950042

ABSTRACT:
A new, useful and nonobvious process is disclosed wherein vapor phase controlled stoichiometry is employed to obtain compound semiconductor films having large crystallite textures. The process has been found to be particularly useful in the formation of compound semiconductor films where one of the components is a high vapor pressure element and the substrate material is amorphous.

REFERENCES:
patent: 3391021 (1968-07-01), Esbitt et al.
patent: 3398021 (1968-08-01), Lehrer et al.
patent: 3992233 (1976-11-01), Farrow
patent: 4034127 (1977-07-01), Busanovich et al.

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