1989-10-12
1990-11-27
James, Andrew J.
357 30, H01L 2978
Patent
active
049740431
ABSTRACT:
A solid-state image sensor comprises a plurality of photodetectors in a substrate of a semiconductor material at a major surface of the substrate and arranged in an array of rows and columns. A separate shift register, such as a CCD shift register, is in the substrate and extends along each column of the photodetectors. Transfer gates are provided to selectively transfer charge carriers from the photodetectors to their adjacent shift register. A separate drain region is provided in the substrate at the major surface adjacent each photodetector and between adjacent photodetectors in each column. A virtual barrier region is provided across an edge of each photodetector between the photodetector and its adjacent drain region. A gate is provided across the space between adjacent photodetectors in each column for selectively allowing charge carriers in each photodetector to be transferred to the drain of the adjacent photodetector to allow the photodetector to be reset and thereby control the exposure time of the photodetectors. The drain region serves as an anti-blooming drain for its adjacent photodetector as well as a drain for resetting the photodetectors.
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Bowers Courtney A.
Eastman Kodak Company
James Andrew J.
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