Dynamic random access memory device and method of producing same

Details Dynamic random access memory device and method of producing same Dynamic random access memory device and method of producing same

1990-03-16

1990-11-27

Hille, Rolf

357 51, 357 71, H01L 2968, H01L 2702, H01L 2348

Patent

active

049740407

ABSTRACT:
A dynamic random access memory device includes a storage capacitor having a plurality of stacked conductive films which form a storage electrode. A gap is formed between elevationally adjacent conductive films so as to surround the storage electrode. A gap is also formed between an insulating film which covers a gate electrode for insulation and a lowermost film of the storage electrode. Connection between the adjacent films may be established so that an uppermost film elevationally extends so as to make contact with a drain region. Also, connection can be established so that an upper film is mounted directly on a lower film. An end portion of the film may be thicker than the other portion thereof. The stacked film structure may be produced by alternatively forming a film made of a material different from the insulating film covering the gate electrode, and a conductive film.

REFERENCES:
patent: 4649406 (1987-03-01), Takemea et al.
patent: 4700457 (1987-10-01), Matsukawa
patent: 4742018 (1988-05-01), Kimura et al.

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