Semiconductor superlattice heterostructures on nonplanar substra

Details Semiconductor superlattice heterostructures on nonplanar substra Semiconductor superlattice heterostructures on nonplanar substra

1989-03-14

1990-11-27

James, Andrew J.

357 16, H01L 2712, H01L 4500, H01L 4902

Patent

active

049740369

ABSTRACT:
A novel quantum well semiconductor is described wherein the quantum well is formed by growing a thin (.ltoreq.500 .ANG.) epitaxial layer on a patterened (e.g. grooved) non-planar substrate so as to achieve thickness variations along the quantum well and hence laterally varying superlattice periodicity and QW depth. Using this structure one can achieve lateral carrier confinement and real refractive index waveguiding. Index guided GaAs/AlGaAs lasers are described.

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patent: 4799091 (1989-01-01), Reed
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