Structure for collection of ionization-induced excess minority c

Details Structure for collection of ionization-induced excess minority c Structure for collection of ionization-induced excess minority c

1981-05-29

1984-01-03

Edlow, Martin H.

357 14, 357 22, 357 47, H01L 3100, H01L 2992, H01L 2980, H01L 2702

Patent

active

044245262

ABSTRACT:
A semiconductor substrate which contains a buried grid-like region of enhanced concentration of an impurity type opposite to that of the semiconductor substrate; and method for the fabrication thereof which includes providing beneath the upper surface of a semiconductor substrate at a first depth a continuous region of a first impurity type which is the same as that of the semiconductor substrate and wherein at preselected isolated discontinuous locations beneath said surface the first impurity type is at a second depth beneath said surface which is greater than said first depth, and then providing beneath said first depth and substantially coincident with said second depth, a second impurity type opposite to that of the first type and at a dosage level lower than the dosage level of the first impurity type so as to provide a grid-like region of enhanced concentration of impurity type opposite to that of the semiconductor substrate for collecting excess minority carriers in the semiconductor substrate.

REFERENCES:
patent: 4176369 (1979-11-01), Nelson et al.
patent: 4247862 (1981-01-01), Klein et al.
Hsieh et al., "A Field-tunneling Effect on the Collection of Alpha-Particle Generated Carriers in Silicon Devices" IEEE Electron Dev. Lett. vol. EDL-2, No. 4, Apr. 1980, pp. 103-105.
Lee, H. S. "High Energy Particle Absorber in Dynamic Memories" IBM Tech. Disc. Bull. No. 22, No. 7, pp. 2689-2690, Dec. 1979.
May et al., "Alpha Particle Induced Soft Errors in Dynamic Memories" IEEE Trans. on Electron Dev., vol. ED-26, No. 1, pp. 2-9, Jan. 1979.
McNutt, M. J. "Buried Channel Charge Transfer Device (CTD) Transient Radiation Hardening Using N-P-N Structures", IEEE Trans. on Nuclear Sci. vol. NS-27, No. 5, pp. 1338-1342, Oct. 1980.
Sugerman et al., "Semiconductor Device Structure with Low Soft Error Rate", IBM Tech. Disc. Bull., vol. 23, No. 2, pp. 616-617, Jul. 1980.
Yaney et al., "Alpha Particle Tracks in Silicon and their Effect on Dynamic MOS RAM Reliability" IEEE Trans. on Electron Dev., vol. ED-26, No. 1, pp. 10-16, Jan. 1979.

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