Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1989-12-27

1991-06-04

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 46, H01S 319

Patent

active

050220365

ABSTRACT:
A semiconductor laser device is disclosed which comprises a semiconductor substrate and a multi-layered crystal structure disposed on the substrate, the multi-layered crystal structure containing a first cladding layer, a quantum-well active layer for laser oscillation, and a second cladding layer with a striped ridge portion for current injection, wherein the difference in the effective refractive index between the region underneath the striped ridge portion and the adjacent regions thereto is greater in the vicinity of at least one of the facets than inside of the facets.

REFERENCES:
patent: 4694460 (1987-09-01), Hayakawa
patent: 4783788 (1988-11-01), Gordon
patent: 4899349 (1990-02-01), Hayakawa et al.
Suyama et al., Japanese Laid-Open Patent Publication No. 2-178989, laid on Jul. 11, 1990, with English abstract.
Suyama et al., Japanese Laid-Open Patent Publication No. 2-177584, laid on Jul. 10, 1990, with English abstract.
Sasaki et al., Japanese Laid-Open Patent Publication No. 2-178984, laid on Jul. 11, 1990, with English abstract.
Suzuki et al., Electronics Letters 20(9): 383-384 (1984); Apr., "Fabrication of GaAlAs Window-Stripe Multi-Quantum well Heterostructure Lasers Utilising Zn Diffusion-Induced Alloying".
Kawanishi et al., Japanese Journal of Applied Physics 27(7):L1310-1312 (1988), Jul., "High Power CW Operation in V-Channel Substrate Inner-Stripe Laser with `Torch` Shaped Waveguide".
Scifres et al., Xerox Disclosure Journal 10(6)383-387 (1985), Nov./Dec., "Semiconductor Quantum Well Window Lasers".

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