Semiconductor quantum effect device having negative differential

Details Semiconductor quantum effect device having negative differential Semiconductor quantum effect device having negative differential

1989-09-12

1991-06-04

Hille, Rolf

357 4, 357 16, 357 61, H01L 2966

Patent

active

050218638

ABSTRACT:
A semiconductor quantum effect device having negative differential resistance characteristics includes a composite potential barrier layer including a first potential barrier layer and a second potential barrier layer; a carrier injection side semiconductor layer connected in contact with the first potential barrier layer; and a carrier injected side semiconductor layer connected in contact with the second potential barrier layer. The semiconductor material elements forming the respective layer satisfy the condition that, when the voltage is not applied to the semiconductor material elements, the energy level at the bottom of conduction band in the carrier injection side semiconductor layer and in the carrier injected side semiconductor layer is lower than the energy level at the top of the valance band in the second potential barrier layer and that a Fermi level within the second potential barrier layer is nearly at the same level as the Fermi level within the barrier injected side semiconductor layer, and an electron and a hole are operated in a cooperative relation therebetween.

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