Integrated circuit power device with automatic removal of defect

Details Integrated circuit power device with automatic removal of defect Integrated circuit power device with automatic removal of defect

1990-05-23

1991-06-04

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 231, 357 41, 307465, H01L 2702, H01L 2701, H01L 2900, H03K 19173

Patent

active

050218611

ABSTRACT:
An integrated circuit power device is disclosed having a large number of individual devices formed in an integrated circuit. Disabling devices are provided in the integrated circuit, a respective one of which is electrically connected to an associated one or more of the individual devices. Each of the disabling devices is responsive to a defect in the associated one or more individual devices, such as a short circuit, for automatically disabling the associated one or more individual devices. An operable integrated circuit power device is obtained, notwithstanding a defective one or more of the individual devices. Testing of individual devices, or customized mask generation is not necessary. In a preferred embodiment, the disabling device is a fusible link formed of a low melting point conductor. In response to the initial powering up of the device or in response to a gate pulse, all fusible links associated with short circuited individual devices will melt, thereby insulating the remainder of the devices from the short circuit.

REFERENCES:
patent: 4387503 (1983-06-01), Aswell et al.
patent: 4543594 (1985-09-01), Mohsen et al.
patent: 4605872 (1986-08-01), Rung
patent: 4771471 (1988-10-01), Comer
patent: 4799126 (1989-01-01), Kruse et al.
patent: 4860185 (1989-08-01), Brewer et al.
patent: 4885477 (1989-12-01), Bird et al.
patent: 4894791 (1990-01-01), Jiang et al.
patent: 4910508 (1990-03-01), Yamazaki
A large Area MOS-GTO With Wafer Repair Technique, M. Stoisiek, M. Beyer, W. Kiffe, H. J. Schultz, H. Schmid, H. Schwarzbauer, R. Stengl, P. Turkes, D. Theis, 666-IEDM, 1987, pp. 666-669.
Modern Power Devices, B. J. Baliga, Power Metal-Oxide-Semiconductor Field-Effect Transistors, 1987, pp. 263-343.
Functional Integration of Power MOS and Bipolar Devices, J. Tihanyi, 1980 IEEE, pp. 75-78.

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