Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1989-05-18

1991-06-04

Jackson, Jr., Jerome

357 236, 357 48, 357 35, 357 41, 357 43, H01L 2906, H01L 2704, H01L 2972, H01L 2702

Patent

active

050218522

ABSTRACT:
This invention relates to a semiconductor integrated circuit device which has an insulated-gate type element part comprising a capacitor which is formed through the use of a trench in a semiconductor layer, wherein a low-resistance buried layer is formed in the semiconductor layer prior to forming the trench so that the trench is formed to be surrounded by the low-resistance buried layer and thereby the low-resistance buried layer is used as an electrode of the capacitor.

REFERENCES:
patent: 4582565 (1986-04-01), Kawakatsu
patent: 4679300 (1987-07-01), Char et al.
patent: 4717942 (1988-01-01), Nakamura et al.
patent: 4729964 (1988-03-01), Natsuaki et al.
patent: 4819054 (1989-04-01), Kawaji et al.
patent: 4860071 (1989-08-01), Sunami et al.

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