NMOS source/drain doping with both P and As

Details NMOS source/drain doping with both P and As NMOS source/drain doping with both P and As

1989-12-13

1991-06-04

Munson, Gene M.

Fishing, trapping, and vermin destroying

357 238, 357 42, 357 90, 437 30, H01L 2978, H01L 2702, H01L 21265

Patent

active

050218514

ABSTRACT:
A process for forming N-channel MOS sources and drains, by implanting both phosphorus and arsenic. The high diffusivity of phosphorus causes it to diffuse in advance of the bulk of the arsenic, so that, after annealing, the source/drain regions have graded regions of gradually decreasing conductivity adjacent to the end of the channels. Thus the electric potential gradient at the ends of the channels is reduced, and impact ionization and hot carrier effects are avoided. The effective radius of the source (or drain) junction is increased, providing increased breakdown voltage.

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Ohta et al. "Quadruply Self-Aligned MOS (OSA MOS)--A New Short-Channel High-Speed High-Density MOSFET for ULSI", IEEE Trans. Electron. Devices, vol. ED-27 (Aug. 1980) pp. 1352-1358.
Sunami et al. "Characteristics of a Buried Channel, Graded Drain with Punch-Through stopper (BGP) MOS Device", 1981 Symposium on VLSI Technology, Hawaii (Sep. 1981), Dig. Tech. Papers, pp. 20-21.
Takeda (Sep. 1981), al. "Submicron MOSFET Structure for Minimizing Channel Hot-Electron Injection", 1981 Symposium on VLSI Technology, Hawaii Sep. 1981, Dig. Tech. Papers, pp. 22-23.

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