Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

1989-07-13

1991-06-04

Prenty, Mark

357 42, 357 41, H01L 2701, H01L 2702

Patent

active

050218433

ABSTRACT:
A semiconductor integrated circuit includes an insulated-gate transistor serving as a driving transistor and composed of source and drain regions of one conductivity type with a high impurity concentration, a channel region disposed between the source and drain regions, an insulating layer covering the substantially entire surface of the channel region except for portions adjacent to the source and drain regions, the insulating layer which covers the channel region having at least a thinner portion, and a gate electrode of a conductive material disposed adjacent to the thinner portion of the insulating layer and having a high diffusion potential with respect to the source region. There is a high resistance region disposed adjacent the channel region which is electrically connected to the source region of the same conductivity type as the channel region. The resistance of the high resistance region satisfies the relations

REFERENCES:
patent: 3673471 (1972-06-01), Klein et al.
patent: 4106045 (1978-08-01), Nishi
patent: 4385937 (1983-05-01), Ohmura
patent: 4489339 (1984-12-01), Uchida

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