Patent
1989-12-14
1991-06-04
Mintel, William
357 54, 357 13, 357 55, H01L 2948
Patent
active
050218409
ABSTRACT:
Disclosed is a Schottky diode having a platinum silicide Schottky anode layer (25) formed in electrical contact with an underlying silicon semiconductor layer (14). A sidewall oxide (36) is formed around the periphery of the platinum silicide area (25) to prevent etching processes from exposing a portion of the underlying silicon semiconductor layer (14). A titanium tungsten diffusion barrier layer (26) and an aluminum composition layer (28) are formed thereover to provide electrical contact to the Schottky diode.
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Grossman Rene E.
Mintel William
Sharp Melvin
Texas Instruments Incorporated
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