FET with a super lattice channel

Details FET with a super lattice channel FET with a super lattice channel

1989-04-25

1991-06-04

Jackson, Jr., Jerome

357 22, 357 237, 357 231, H01L 2978, H01L 4902

Patent

active

050218395

ABSTRACT:
An improved FET is disclosed. The transistor is characterized in that its channel is constituted in the form of a super lattice. The super lattice structure provides a number of square well potential areas through which carriers can pass with little interaction with the gate insulating film.

REFERENCES:
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4819043 (1989-04-01), Yazawa et al.

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