Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1996-09-12
1997-10-28
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
H01L 2900
Patent
active
056820593
ABSTRACT:
In a semiconductor device including an anti-fuse element, a first electrode layer is formed on a semiconductor substrate. A first insulating layer is formed only on the first electrode layer for insulating the first electrode layer. An anti-fuse insulating film is coated on at least one side wall portion of each of the first electrode layer and the first insulating layer. A second electrode layer is formed on the anti-fuse insulating film, and the first and second electrode layers and the anti-fuse insulating film constitute the anti-fuse element.
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Kueing-Long Chen et al., "A Sublithographic Antifuse Structure for Field-Programmable Gate Array Applications", IEEE Electron Device Letters, vol. 13, No. 1 (Jan. 1992) pp. 53-55.
Steve Chiang, et al., "Antifuse Structure Comparison for Field Programmable Gate Arrays", IEEE, 1992, pp. 611-614. no month.
Takagi Mariko
Yoshii Ichiro
Carroll J.
Kabushiki Kaisha Toshiba
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