Multilayer antifuse with low leakage and method of manufacture t

Details Multilayer antifuse with low leakage and method of manufacture t Multilayer antifuse with low leakage and method of manufacture t

1994-03-31

1997-10-28

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, 437922, H01L 2904, H01L 2900

Patent

active

056820585

ABSTRACT:
The present invention provides for an antifuse in an integrated circuit, which has a stacked antifuse structure on a first interconnection line. The stacked structure has a first programming layer of amorphous silicon on the first interconnection line, a very thin insulating layer of silicon dioxide on the first programming layer, and a second programming layer of amorphous silicon on the very thin oxide layer. A second interconnection line on the second programming layer completes the antifuse which has a low leakage current between the first and second interconnection lines.

REFERENCES:
patent: 4748490 (1988-05-01), Hollingsworth
patent: 5070384 (1991-12-01), McCollum et al.
patent: 5100827 (1992-03-01), Lytle
patent: 5272101 (1993-12-01), Forouhi
patent: 5373169 (1994-12-01), McCollum
patent: 5411917 (1995-05-01), Forouhi
patent: 5502315 (1996-03-01), Chua et al.

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