Method of soldering semiconductor substrate on supporting plate

Details Method of soldering semiconductor substrate on supporting plate Method of soldering semiconductor substrate on supporting plate

1989-10-17

1990-11-27

Ramsey, Kenneth J.

Metal fusion bonding

Process

Metal to nonmetal with separate metallic filler

228124, 228198, 228232, 228238, H01L 2158

Patent

active

049729888

ABSTRACT:
In order to solder a silicon substrate on a supporting plate, an aluminum thin plate is inserted therebetween as a solder metal layer. An assembly thus obtained is heated to 580.degree. C. which is higher than the recrystallization temperature 264.degree. C. of the aluminum thin plate but is lower than the eutectic reaction temperature 585.degree. C. of the interface between the silicon substrate and the aluminum thin plate. After the assembly is held at 580.degree. for twenty minutes, the assembly is further heated to 610.degree. C. in order to melt the aluminum thin plate into which silicon atoms are diffused. The aluminum thin plate changes uniformly to an eutectic layer consisting of silicon and aluminum, whereby the silicon substrate is soldered on the supporting plate.

REFERENCES:
patent: 4278195 (1981-07-01), Singh
patent: 4331286 (1982-05-01), Miyazaki et al.
patent: 4659006 (1987-04-01), Polansky
patent: 4771018 (1988-09-01), Bhattacharyya et al.
patent: 4819857 (1989-04-01), Mizuishi et al.

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