Coherent light generators – Particular active media – Semiconductor
Patent
1999-08-13
2000-09-12
Sanghavi, Hemang
Coherent light generators
Particular active media
Semiconductor
372 45, 257 94, H01S 319
Patent
active
061188018
ABSTRACT:
A gallium nitride-based compound semiconductor laser has a double-heterojunction structure, in which an active layer is sandwiched between cladding layers, on a sapphire substrate. A GaN current blocking layer having a striped opening portion is formed on the p-cladding layer. A p-GaN buried layer and a contact layer through which a current is injected into the opening portion of the current blocking layer and which are larger in area than the opening portion are formed. The active layer has a multiple quantum well structure constituted by a cyclic structure formed by cyclically stacking two types of InGaAlN layers which have different band gaps and are 10 nm or more thick.
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Fujimoto Hidetoshi
Hatakoshi Gen-ichi
Ishikawa Masayuki
Nishio Johji
Nunoue Shin-ya
Kabushiki Kaisha Toshiba
Sanghavi Hemang
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