Transistor having reduced hot carrier implantation

Details Transistor having reduced hot carrier implantation Transistor having reduced hot carrier implantation

1995-06-07

1997-10-28

Niebling, John

Fishing, trapping, and vermin destroying

437979, 437983, H01L 21265

Patent

active

056817681

ABSTRACT:
A transistor having reduced hot carrier implantation is disclosed which is formed on an outer surface (12) of a semiconductor substrate (10). The transistor comprises a source region (22) and a drain region (24) which define there between a channel region (34). A gate insulator layer (14) insulates a gate conductor (16) from the channel region (34). A sidewall insulator body (20) is formed such that a thickened region of insulator separates an end of gate conductor (16) from a portion of channel region (34) proximate drain region (24). This thickened insulator reduces the local electric field in channel region (34) near drain region (24) and correspondingly reduces the implantation into gate insulator (14) of hot carriers generated from impact ionization.

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