Method of fabricating semiconductor device

Details Method of fabricating semiconductor device Method of fabricating semiconductor device

1995-02-15

1997-10-28

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 40TFT, 437 41TFT, 437101, 437173, 437174, 437247, H01L 21265

Patent

active

056817592

ABSTRACT:
Method of forming a crystalline silicon film having excellent characteristics. An amorphous silicon film is formed on a substrate having an insulating surface. The amorphous film is thermally annealed at 400.degree.-620.degree. C., preferably at 520.degree.-620.degree. C., more preferably at 550.degree.-600.degree. C., for 1-12 hours. The silicon film is crystallized to a crystallinity of 0.1-99.9%, preferably 1-99%. Then, the silicon film is irradiated with UV laser radiation. Thus, the crystallinity of the silicon film is improved in a short time. Crystalline silicon films having uniform characteristics are obtained.

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