Single layer polycrystalline floating gate

Details Single layer polycrystalline floating gate Single layer polycrystalline floating gate

1984-11-07

1987-03-10

Fears, Terrell W.

Static information storage and retrieval

Floating gate

Particular biasing

365184, G11C 1140

Patent

active

046495207

ABSTRACT:
A programmable read only memory includes a transistor having an N type source, an N type drain, and a polysilicon floating gate extending over the channel between the source and drain. The floating gate also extends over and is capacitively coupled to an N well. By applying an electric potential to the N well, the potential on the floating gate above the channel is altered.
Within the N well is a P region, which mitigates the decrease in capacitive coupling between the N well and the floating gate caused by carrier depletion.

REFERENCES:
patent: 4599706 (1986-07-01), Guterman

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