Semiconductor memory device having stacked capacitor-type memory

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357 2311, 357 51, 357 54, H02L 2978

Patent

active

046494065

ABSTRACT:
In a semiconductor memory device having stacked capacitor-type memory cells, the capacitor of each memory cell includes a base electrode, an insulating layer, and a counter electrode. The base electrode of each memory cell is partly superposed without contact on the base electrodes of other adjacent memory cells.

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patent: 4355374 (1982-10-01), Sakai et al.
patent: 4460911 (1984-07-01), Salters

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