Plasma processing apparatus

Coating apparatus – Gas or vapor deposition – With treating means

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118723I, C23C 1600

Patent

active

056813937

ABSTRACT:
An inductive coupling plasma processing apparatus is equipped with a dielectric portion through which high-frequency electric power is introduced and in which a plasma discharge is generated, and the antenna for supplying a discharge chamber with electric power is arranged near the dielectric portion. The dielectric portion is formed on a vacuum chamber having an inside space with low pressure, into which a reactive gas is introduced. The antenna surrounds the dielectric portion and the area of a nearest surface facing the dielectric portion is minimized. The antenna is desired to be so configured that a shape of its cross section perpendicular to a flow direction of a high-frequency current is a flat rectangle, and a long side of the cross section is substantially perpendicular to an outside surface of the dielectric portion. In accordance with the configuration, the area of the antenna's surface facing the dielectric portion can be reduced as much as possible, and an undesirable sputtering action on the antenna projecting part of the dielectric portion can be reduced to the minimum.

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Hideo Sugai et al., Proc. 15th Dry Process Symposium, Electrostatic Coupling of Antenna and the Shielding Effect in Inductive RF Plasmas, (1993) pp. 27-31.

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